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An investigation of optimal interfacial film condition for Cu-Mn alloy based source/drain electrodes in hydrogenated amorphous silicon thin film transistors

机译：氢化非晶硅薄膜晶体管中Cu-mn合金基源/漏电极最佳界面膜条件的研究

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Haruhiko Asanuma; Takaaki Suzuki; Toshiaki Kusunoki;
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1. An investigation of optimal interfacial film condition for Cu-Mn alloy based source/drain electrodes in hydrogenated amorphous silicon thin film transistors [J] . Haruhiko Asanuma, Takaaki Suzuki, Toshiaki Kusunoki AIP Advances . 2012,第2期

机译：氢化非晶硅薄膜晶体管中基于Cu-Mn合金的源/漏电极的最佳界面膜条件的研究
2. Study on Ozonated Solution Oxidation of Phosphorus Doped Hydrogenated Amorphous Silicon Surface for Cu-Mn Alloy Based Electrodes in Thin Film Transistor [J] . Haruhiko Asanuma, Takaaki Suzuki, Toshiaki Kusunoki Japanese journal of applied physics . 2012,第6Issue1期

机译：薄膜晶体管中Cu-Mn合金基电极上磷掺杂的氢化非晶硅表面的臭氧溶液氧化研究
3. Annealing-free copper source-drain electrodes based on copper-calcium diffusion barrier for amorphous silicon thin film transistor [J] . Yu Zhinong, Xue Jianshe, Yao Qi, Thin Solid Films . 2017,第FEBa28期

机译：基于铜钙扩散势垒的非晶硅薄膜晶体管免退火铜源漏电极
4. TiO2:Nb film thickness influences on the amorphous InGaZnO thin film transistors with Mo/TiO2:Nb source-drain electrodes [C] . Qingping Lin, Baozhu Chang, Letao Zhang, 2017 International Conference on Electron Devices and Solid-State Circuits . 2017

机译：TiO 2 ：Nb膜厚对具有Mo / TiO2：Nb源漏电极的非晶InGaZnO薄膜晶体管的影响
5. THE EFFECT OF DEPOSITION CONDITIONS ON THE STRUCTURAL, OPTOELECTRONIC AND DEVICE PROPERTIES OF HYDROGENATED AMORPHOUS SILICON AND SILICON-GERMANIUM ALLOYS (SOLAR CELL, THIN FILM TRANSISTORS). [D] . YAN, PHILIP YU. 1987

机译：沉积条件对氢化非晶硅和硅锗合金（太阳能电池，薄膜晶体管）的结构，光电和器件性能的影响。
6. Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors [O] . Honglong Ning, Jianqiu Chen, Zhiqiang Fang, 2017

机译：在薄膜晶体管的非晶InGaZnO层上直接喷墨印刷银源/漏电极
7. An investigation of optimal interfacial film condition for Cu-Mn alloy based source/drain electrodes in hydrogenated amorphous silicon thin film transistors [O] . Haruhiko Asanuma, Takaaki Suzuki, Toshiaki Kusunoki 2012

机译：氢化非晶硅薄膜晶体管中基于Cu-Mn合金的源/漏电极的最佳界面膜条件的研究
8. Preparation and Characterization of Hydrogenated Amorphous-Silicon Films Produced by Ion Plating and Hydrogenated Amorphous-Boron Films Produced by Glow-Discharge Decomposition. Final Report, April 1, 1980-May 31, 1981 [R] . Cocks F.H, Jones, P. L. 1981

机译：添加到阅览室阅读软件下载与<<辉光放电分解制备离子镀和氢化非晶硼薄膜制备氢化非晶硅薄膜及其表征>>相似的文献。最终报告，1980年4月1日至1981年5月31日

An investigation of optimal interfacial film condition for Cu-Mn alloy based source/drain electrodes in hydrogenated amorphous silicon thin film transistors

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